With the development of atomic and close-to-atomic-scale manufacturing (ACSM), the requirement of depositing thin films without defects and impurities for laminated structures is greatly improved. The use of theory calculation, multiscale simulation, and more novel methods would steer ALD into further evolution, which makes it possible to cater to the demand of ACSM. ALD is an enabling technique for atomic and close-to-atomic scale manufacturing (ACSM) of materials, structures, devices, and systems in versatile applications. Emerging applications of ALD are illustrated in the fabrication of passivation layers, functional surface layers, and buffer layers, which have shown the development trend of ALD in miniaturization and diversification. The applications of ALD in the key nodes of integrated circuits are initially demonstrated, and the area-selective ALD technique is discussed as a bottom-up method for self-aligned nanomanufacturing. This article provides an introduction to ALD and highlights its applications in semiconductors, pan-semiconductors, environment and energy, and other fields. These merits promote the industrial and research applications of ALD in various fields. Based on its self-limiting surface reactions, ALD has excellent conformality, sub-nanometer thickness control, and good process compatibility. Atomic layer deposition (ALD) is a thin-film fabrication technique that has great potential in nanofabrication.
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